Determine the ideal reverse-saturation current density in a silicon pn junction at T=300 K. Consider the following parameters in a silicon pn junction:
No = NA = 10¹6 cm⁻3
n = 1.5 x 10¹6 cm⁻3
Dn = 25cm²/s
Dp = 10cm²/s
Tpo = tno = 5 x 10⁷s
Er = 11.7